| 摘要 |
<p>A method comprises bonding a silicon wafer or silicon-on-insulator wafer having a monocrystalline silicon surface region and a wafer-like carrier comprising silicon carbide so as to form a composite wafer having a surface with the monocrystalline silicon surface region for silicon carbide heterogrowth, such as heteroepitaxy. The composite wafer can help avoid wafer bow.</p> |
