Photodiode with interface charge control by implantation and associated method.

摘要

The photodiode (1) has an N-doped layer (2) and a P-doped layer (3) comprising a common face, and a deep isolation trench (4) comprising a face contiguous with the doped layers. A free face of the P-doped layer is placed in contact with a conducting layer (5). A protective layer (7) generates a layer of negative charges at an interface between the doped layers and the deep isolation trench. The protective layer is realized by implanting P dopant type species such as boron and indium. An independent claim is also included for a method for realizing a deep isolation trench.