发明名称 |
Fabrication process of a hybrid semiconductor substrate |
摘要 |
The present invention relates to a method for manufacturing a hybrid semiconductor substrate comprising the steps of (a) providing a hybrid semiconductor substrate comprising a semiconductor-on-insulator (SeOl) region, that comprises an insulating layer over a base substrate and a SeOl layer over the insulating layer, and a bulk semiconductor region, wherein the SeOl region and the bulk semiconductor region share the same base substrate; (b) providing a mask layer over the SeOl region; and (c) forming a first impurity level by doping the SeOl region and the bulk semiconductor region simultaneously such that the first impurity level in the SeOl region is contained within the mask. Thereby avoiding higher number of process steps involved in the manufacturing process of hybrid semiconductor substrate.
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申请公布号 |
EP2254148(A1) |
申请公布日期 |
2010.11.24 |
申请号 |
EP20090290372 |
申请日期 |
2009.05.18 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES |
发明人 |
BOURDELLE, KONSTANTIN;NGUYEN, BICH-YEN;SADAKA, MARIAM |
分类号 |
H01L21/762;H01L21/266 |
主分类号 |
H01L21/762 |
代理机构 |
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