| 摘要 |
<p>The device has a resonant stack (32) comprising metallic conductive layers (34, 38) and a piezoelectric layer (36), where one of the metallic layers is formed on a silicon substrate (30). A buried cavity (40) is formed deeply in the substrate. Thickness of the silicon substrate above the cavity has a first value in a first region (42) situated opposite to center of the stack, a second value in a second region (44) situated under the periphery of the stack and a third value in a third region (46) enclosing the second region, where the second value is greater than first and third values. An independent claim is also included for a method for forming a resonant device.</p> |
