| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device which can form a quantum dot of good quality in a desired density and to provide a method of manufacturing it. SOLUTION: In the optical semiconductor device having the quantum dot 20 formed on a base layer 16, trace element 18 with different configuration element and ionic radius of the base layer exists in at least the surface layer part of the base layer. The quantum dot is formed by the local distortion generated in the surface layer part by the existence of a trace element. The surface density of the quantum dot can be controlled by setting suitably the surface density of the trace element made to exist in the surface layer part of the base layer. Moreover, since the trace element made to exist in the surface layer part of the base layer is a minute amount, the quality of the base layer is not spoiled as well. Therefore, the quantum dot can be formed by a desired density without spoiling the quality of the base layer or the quantum dot. COPYRIGHT: (C)2006,JPO&NCIPI |
