| 摘要 |
A tantalum sputtering target, wherein when the sum of the overall crystalline orientation is 1 on a tantalum target surface, the area ratio of crystals having any orientation among (100), (111), (110) does not exceed 0.5. Thus, obtained is a tantalum sputtering target having superior deposition properties where the deposition speed is high, film evenness (uniformity) is superior, and generation of arcings or particles is reduced. |
