发明名称 |
Leaded semiconductor power module with direct bonding and double sided cooling |
摘要 |
<p>A leaded semiconductor power module (10/10') includes a first heatsink (24/24'), an electrically insulated substrate (40) thermally coupled to the first heatsink (24/24'), one or more semiconductor chips (12-18), a leadframe substrate (42), and a second heatsink (22/22') thermally coupled to the leadframe substrate (42), the assembly being overmolded with an encapsulant (20/20') to expose the first heatsink (24/24'), the second heatsink (22/22') and peripheral terminals (26-34) of the leadframe substrate (42). The semiconductor chips (12-18) are electrically and structurally coupled to both the insulated substrate (40) and the leadframe substrate (42), and conductive spacers (90-96) electrically and structurally couple the insulated substrate (40) to the leadframe substrate (42).
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申请公布号 |
EP2164100(A3) |
申请公布日期 |
2010.11.24 |
申请号 |
EP20090169174 |
申请日期 |
2009.09.01 |
申请人 |
DELPHI TECHNOLOGIES, INC. |
发明人 |
LOWRY, MICHAEL J.;BRAUER, ERIC A.;DEGENKOLB, THOMAS A.;WONG, VICTOR |
分类号 |
H01L23/495;H01L23/433;H01L23/498 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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