NON-VOLATILE MEMORY DEVICE

摘要

PURPOSE: A non-volatile memory device is provided to improve a data detection performance in a reading operation by reinforcing the transfer characteristic of data detection voltage. CONSTITUTION: A data sense amplifier(220) supplies a data detection current to memory cells(211,212). The data sense amplifier detects a data detection voltage corresponding to the resistance of the memory cell. A first switching element(MP0) transfers a data detection current to the memory cells. A second switching element(MN0) transfers a data detection current to the memory cells. The second switching element has voltage transfer property complementary with the first switching element.