| 摘要 |
Disclosed is a method of manufacturing a semiconductor light emitting device (100). The method includes forming a light emitting structure including a first conductive semiconductor layer (110), an active layer (120), and a second conductive semiconductor layer (130) on a substrate, forming an electrode layer (150) on the light emitting structure, forming a conductive support member (170) on the electrode layer, and planarizing a top surface of the conductive support member (170). |
