| 摘要 |
<p>PURPOSE: A method of manufacturing a semiconductor device is provided to improve the reliability of a semiconductor device by suppressing a metal foreign material in etching. CONSTITUTION: A gate line(202) is formed on the top of a semiconductor substrate(200). Gate lines are formed in a die(DI) region. The gate lines are formed in various forms according to the kind of the semiconductor. A junction area is formed on the semiconductor between the gate lines and electrically connects the gate lines.</p> |
