发明名称 |
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND ELECTRONIC DEVICE |
摘要 |
<p>The objective is to improve capabilities such as high-speed switching of a compound semiconductor device. Provided is a semiconductor wafer comprising a silicon wafer; an insulating film that is formed on the silicon wafer and that has an open portion reaching the silicon wafer; a Ge crystal formed in the open portion; a seed compound semiconductor crystal that is grown with the Ge crystal as a nucleus and that protrudes beyond a surface of the insulating film; and a laterally grown compound semiconductor layer that is laterally grown on the insulating film with a specified surface of the seed compound semiconductor crystal as a seed surface.</p> |
申请公布号 |
KR20100123680(A) |
申请公布日期 |
2010.11.24 |
申请号 |
KR20107016272 |
申请日期 |
2009.02.27 |
申请人 |
SUMITOMO CHEMICAL CO., LTD. |
发明人 |
HATA MASAHIKO;TAKADA TOMOYUKI |
分类号 |
H01L21/20;H01L21/336;H01L29/78 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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