| 摘要 |
<p>A high frequency semiconductor circuit device in which a microwave circuit can be miniaturized is provided, which includes a GaAs substrate; a plurality of FETs formed on the GaAs substrate; and a microstrip line formed on the GaAs substrate and electrically connecting FETs each other, wherein a thickness of a region of the GaAs substrate on which the microstrip line is formed is different from a thickness of a region of the GaAs substrate on which FETs are formed.
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