发明名称 NON-VOLATILE MEMORY DEVICE
摘要 PURPOSE: A non-volatile memory device is provided to reduce a layout area by controlling a plurality of programming current driving units with a common control voltage of the common programming controlling unit. CONSTITUTION: A plurality of programming current drivers supply a programming current to a corresponding memory cell. A common programming current controller(31) generates a common control voltage which controls the programming current. Switching units(33_1,33_2,33_N) transmit the common control voltage to a selected programming current driving unit.
申请公布号 KR20100123392(A) 申请公布日期 2010.11.24
申请号 KR20090042602 申请日期 2009.05.15
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YOON, TAE HUN;YOON, HYUCK SOO
分类号 G11C16/12;G11C16/10 主分类号 G11C16/12
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