| 摘要 |
<p>PURPOSE: A method of fabricating array substrate is provided to reduce the thickness of an active layer by preventing the effects of dry etching the active layer. CONSTITUTION: Using the patterning of a second metal layer and a data line(130), source and drain electrodes(133,136) are formed. An impurity amorphous silicon layer exposes the data line, source, and drain electrode. The removal of the impurity amorphous silicon layer is made by dry etching. In a switching area(TrA), an inter-layer insulating film(122) of the etch stopper is formed between the source and drain electrode. As a result, the influence of dry etching the active layer(115) is prevented.</p> |
