Thin film Ib/IIIa/VIa compound semiconductor solar cell with potential barrier within the absorbing layer and method of production of such solar cell

摘要

A thin film solar cell, with an absorber structure comprising two overlying compound semiconductor phases (31, 32), an inter potential barrier and a p-conductive surface, is new. A thin film solar cell, based on Ib/IIIa/VIa compound semiconductors, has a photo-active polycrystalline absorber layer whi comprises a heterogeneous structure of two overlying Ib/IIIa/VIa phases (31, 32), an internal potential barrier and a p-conducti surface. An Independent claim is also included for production of the above thin film solar cell.