发明名称 Methods of manufacturing semiconductor devices and structures thereof
摘要 Methods of manufacturing semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming recesses in a first region and a second region of a workpiece. The first region of the workpiece is masked, and the recesses in the second region of the workpiece are filled with a first semiconductive material. The second region of the workpiece is masked, and the recesses in the first region of the workpiece are filled with a second semiconductive material.
申请公布号 US7838372(B2) 申请公布日期 2010.11.23
申请号 US20080125238 申请日期 2008.05.22
申请人 INFINEON TECHNOLOGIES AG;CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION;SAMSUNG ELECTRONICS CO., LTD. 发明人 HAN JIN-PING;YANG JONG HO;LAI CHUNG WOH;UTOMO HENRY
分类号 H01L21/336 主分类号 H01L21/336
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