发明名称 |
Methods of manufacturing semiconductor devices and structures thereof |
摘要 |
Methods of manufacturing semiconductor devices and structures thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming recesses in a first region and a second region of a workpiece. The first region of the workpiece is masked, and the recesses in the second region of the workpiece are filled with a first semiconductive material. The second region of the workpiece is masked, and the recesses in the first region of the workpiece are filled with a second semiconductive material.
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申请公布号 |
US7838372(B2) |
申请公布日期 |
2010.11.23 |
申请号 |
US20080125238 |
申请日期 |
2008.05.22 |
申请人 |
INFINEON TECHNOLOGIES AG;CHARTERED SEMICONDUCTOR MANUFACTURING, LTD.;INTERNATIONAL BUSINESS MACHINES CORPORATION;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN JIN-PING;YANG JONG HO;LAI CHUNG WOH;UTOMO HENRY |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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