One exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more of a metal oxide including zinc-germanium, zinc-lead, cadmium-germanium, cadmium-tin, cadmium-lead.
申请公布号
US7838348(B2)
申请公布日期
2010.11.23
申请号
US20090630632
申请日期
2009.12.03
申请人
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.
发明人
HOFFMAN RANDY L.;HERMAN GREGORY S.;MARDILOVICH PETER P.
