SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

PURPOSE: It differently sanctions the precharged voltage in the bit line according to data and the semiconductor memory device and their driving method are proceed the precharging operation. CONSTITUTION: The memory cell(410) comprises one transistor and magnetic tunnel junction device. The write driving part(430) drives the bit line and source line in response to the first and the second operating controlling signal to the corresponding to voltage. The write driving part comprises the source line driving part(432) and bit line drive part(434).