| 摘要 |
A method for fabricating a semiconductor device includes: the step (a) of forming a vibrating film on a predetermined region of each of a plurality of chips included in a semiconductor wafer; the step (b) of forming, on the semiconductor wafer, an intermediate film containing a sacrifice layer located on the vibrating film of each of the chips; and the step (c) of forming a fixed film on the intermediate film. This method further includes, after the step (c), the step (d) of subjecting the semiconductor wafer to blade dicing to separate the chips, and the step (e) of removing, by etching, the sacrifice layer to provide a cavity between the vibrating film and the fixed film. |
