| 摘要 |
In an embodiment, an apparatus includes a first field effect transistor including a first source contact region, a first drain contact region and a first plurality of fins overlying a substrate, a first gate overlying the first plurality of fins, the first source contact region coupled to first ends of the first plurality of fins, and a second field effect transistor including a second source contact region, a second drain contact region, and a second plurality of fins overlying the substrate, a second gate overlying the second plurality of fins, and an interconnection contact region overlying the substrate, electrically coupling the first drain contact region and the second source contact region and abutting the first and the second pluralities of fins.
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