发明名称 |
Structure design and fabrication on photomask for contact hole manufacturing process window enhancement |
摘要 |
The present disclosure provides a mask. The mask includes a substrate; a first attenuating layer disposed on the substrate, having a first material and a first thickness corresponding to a phase shift; and a second attenuating layer having a second material and disposed on the first attenuating layer. The first and second attenuating layers define a first feature having a first opening extending through the first and second attenuating layers; and a second feature having a second opening extending through the second attenuating layer and exposing the first attenuating layer. One of the first and second features is a main feature and the other one is an assistant feature proximate to the main feature.
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申请公布号 |
US7838173(B2) |
申请公布日期 |
2010.11.23 |
申请号 |
US20060565743 |
申请日期 |
2006.12.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
CHANG YA HUI;WU TSIAO CHEN;WANG SHIH-CHE |
分类号 |
G03F1/00;H01L21/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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