发明名称 Structure design and fabrication on photomask for contact hole manufacturing process window enhancement
摘要 The present disclosure provides a mask. The mask includes a substrate; a first attenuating layer disposed on the substrate, having a first material and a first thickness corresponding to a phase shift; and a second attenuating layer having a second material and disposed on the first attenuating layer. The first and second attenuating layers define a first feature having a first opening extending through the first and second attenuating layers; and a second feature having a second opening extending through the second attenuating layer and exposing the first attenuating layer. One of the first and second features is a main feature and the other one is an assistant feature proximate to the main feature.
申请公布号 US7838173(B2) 申请公布日期 2010.11.23
申请号 US20060565743 申请日期 2006.12.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHANG YA HUI;WU TSIAO CHEN;WANG SHIH-CHE
分类号 G03F1/00;H01L21/00 主分类号 G03F1/00
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