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发明名称
A nonvolatile memory device using traps formed in ????? by ???? ion implantation as charge storage levels and its fabrication method
摘要
申请公布号
KR100996292(B1)
申请公布日期
2010.11.23
申请号
KR20080131068
申请日期
2008.12.22
申请人
发明人
分类号
H01L27/115;H01L21/265;H01L21/324;H01L21/8247
主分类号
H01L27/115
代理机构
代理人
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