发明名称 |
Methods of etching nanodots, methods of removing nanodots from substrates, methods of fabricating integrated circuit devices, methods of etching a layer comprising a late transition metal, and methods of removing a layer comprising a late transition metal from a substrate |
摘要 |
Embodiments of the invention include methods of etching nanodots, to methods of removing nanodots from substrates, and to methods of fabricating integrated circuit devices. In one embodiment, a method of etching nanodots that include a late transition metal includes exposing such nanodots to a gas comprising a phosphorus and halogen-containing compound and an oxidizing agent. After the exposing, the nanodots which are remaining and were exposed are etched (either partially or completely) with an aqueous solution comprising HF.
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申请公布号 |
US7837889(B2) |
申请公布日期 |
2010.11.23 |
申请号 |
US20070773580 |
申请日期 |
2007.07.05 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MARSH EUGENE P. |
分类号 |
B44C1/22;C03C15/00;C03C25/68;C23F1/00 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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