发明名称 Process for producing light-emitting semiconductor device
摘要 A process for producing a light-emitting semiconductor device includes: (i) mixing at least one low-molecular silane or at least one silanol with an alcohol solution containing an alkoxysiloxane to prepare a mixture solution, the amount of the silane or silanol being from 10% by weight to 50% by weight based on the dry weight of an encapsulating material to be formed; (ii) applying the mixture solution to a light-emitting element; (iii) vaporizing the alcohol solvent in the mixture solution applied and drying the residual mixture to thereby form the encapsulating material; and (iv) curing the encapsulating material.
申请公布号 US7838311(B2) 申请公布日期 2010.11.23
申请号 US20080343191 申请日期 2008.12.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUZUKI AKIKO;FUJIEDA SHINETSU;KONO TATSUOKI;TAKAHASHI TOSHIHIDE;OOTSUKA KAZUAKI;OSHIO HIROAKI;TAMURA HIDEO
分类号 H01L21/00;H01L33/48;H01L33/50;H01L33/56 主分类号 H01L21/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利