发明名称 |
Process for producing light-emitting semiconductor device |
摘要 |
A process for producing a light-emitting semiconductor device includes: (i) mixing at least one low-molecular silane or at least one silanol with an alcohol solution containing an alkoxysiloxane to prepare a mixture solution, the amount of the silane or silanol being from 10% by weight to 50% by weight based on the dry weight of an encapsulating material to be formed; (ii) applying the mixture solution to a light-emitting element; (iii) vaporizing the alcohol solvent in the mixture solution applied and drying the residual mixture to thereby form the encapsulating material; and (iv) curing the encapsulating material.
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申请公布号 |
US7838311(B2) |
申请公布日期 |
2010.11.23 |
申请号 |
US20080343191 |
申请日期 |
2008.12.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SUZUKI AKIKO;FUJIEDA SHINETSU;KONO TATSUOKI;TAKAHASHI TOSHIHIDE;OOTSUKA KAZUAKI;OSHIO HIROAKI;TAMURA HIDEO |
分类号 |
H01L21/00;H01L33/48;H01L33/50;H01L33/56 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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