发明名称 |
Magnetic memory cell and magnetic random access memory |
摘要 |
A magnetic memory cell and a magnetic random access memory that are highly reliable and low-power consuming. An upper electrode having a connecting area smaller than the area of a ferromagnetic free layer of a magnetic memory cell is connected to the ferromagnetic free layer. A current is applied to produce an uneven magnetic field over the magnetic memory cell, whereby spin-transfer torque magnetization reversal can be realized with low current and at small write error rate.
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申请公布号 |
US7838953(B2) |
申请公布日期 |
2010.11.23 |
申请号 |
US20070905789 |
申请日期 |
2007.10.04 |
申请人 |
HITACHI, LTD.;UNIV TOHOKU |
发明人 |
OHNO HIDEO;IKEDA SHOJI;HAYAKAWA JUN |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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