发明名称 |
Vertical nitride semiconductor light emitting diode and method of manufacturing the same |
摘要 |
A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.
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申请公布号 |
US7838317(B2) |
申请公布日期 |
2010.11.23 |
申请号 |
US20090544868 |
申请日期 |
2009.08.20 |
申请人 |
SAMSUNG LED CO., LTD. |
发明人 |
YOON SANG HO;LEE SU YEOL;BAIK DOO GO;CHOI SEOK BEOM;JANG TAE SUNG;WOO JONG GUN |
分类号 |
H01L21/56;H01L33/12;H01L33/22;H01L33/32;H01L33/36 |
主分类号 |
H01L21/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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