| 摘要 |
An control unit of the amplification type solid-state image pickup device, during a first period T2, controls the gate voltage of the transfer transistor to a first gate voltage V1 to make electrons as signal charge transferred from the phototransistor to the charge detection part. Also, the control unit, in a second period T3 subsequent to the first period T2, sets the gate of the transfer transistor to a high impedance and moreover, in a period TPU within the second period T3, controls the gate voltage of the transfer transistor to a second gate voltage V2 which allows power of transferring the signal charge to the charge detection part to be enhanced than the first gate voltage V1.
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