发明名称 Method and circuit arrangement configured for driving a field-effect-controlled transistor
摘要 A method and circuit arrangement including driving a field effect controlled transistor. One embodiment provides a first load terminal, a second load terminal and a control terminal. The control terminal is driven, at least during a Miller plateau phase of the transistor, with a pulse-width-modulated control signal whose period duration is shorter than the duration of the Miller plateau phase.
申请公布号 US7839185(B2) 申请公布日期 2010.11.23
申请号 US20080022587 申请日期 2008.01.30
申请人 INFINEON TECHNOLOGIES AG 发明人 SCHWARZER ULRICH MICHAEL GEORG
分类号 H03B1/00;H03K3/00 主分类号 H03B1/00
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