发明名称 |
Thin film transistor, method of fabricating the thin film transistor, and display device including the thin film transistor |
摘要 |
A thin film transistor (TFT), a method of fabricating the TFT, and a display device including the TFT are provided. The TFT includes a semiconductor layer having a channel region and source and drain regions is crystallized using a crystallization-inducing metal. The crystallization-inducing metal is gettered by either a metal other than the crystallization-inducing metal or a metal silicide of a metal other than the crystallization-inducing metal. A length and width of the channel region of the semiconductor layer and a leakage current of the semiconductor layer satisfy the following equation: Ioff/W=3.4E-15L2+2.4E-12L+c, wherein Ioff (A) is the leakage current of the semiconductor layer, W (mm) is the width of the channel region, L (μm) is the length of the channel region, and “c” is a constant ranging from 2.5E-13 to 6.8E-13.
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申请公布号 |
US7838885(B2) |
申请公布日期 |
2010.11.23 |
申请号 |
US20080138884 |
申请日期 |
2008.06.13 |
申请人 |
SAMSUNG MOBILE DISPLAY CO., LTD. |
发明人 |
YANG TAE-HOON;LEE KI-YONG;SEO JIN-WOOK;PARK BYOUNG-KEON |
分类号 |
H01L27/14 |
主分类号 |
H01L27/14 |
代理机构 |
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