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发明名称
Metal transistor device
摘要
The present invention relates to a depletion or enhancement mode metal transistor in which the channel region of a transistor device comprises a thin film metal or metal composite layer formed over an insulating substrate.
申请公布号
US7838875(B1)
申请公布日期
2010.11.23
申请号
US20040762658
申请日期
2004.01.22
申请人
TSANG DEAN Z
发明人
TSANG DEAN Z.
分类号
H01L29/12;H01L49/00
主分类号
H01L29/12
代理机构
代理人
主权项
地址
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