| 摘要 |
<p>PURPOSE: A method and an apparatus for growing a silicon crystal from melt are provided to control the concentration of oxygen. CONSTITUTION: A horizontal magnetic filed has a magnetic induction(B) in the center of the magnetic filed. A crucible(1) receives melt. A magnetic system applies the horizontal magnetic field with the magnetic induction in the center of the magnetic field to the melt. A heat sink surrounds silicon single crystal(5).</p> |
