发明名称 |
Three-dimensional non-volatile register with an oxygen-ion-based memory element and a vertically-stacked register logic |
摘要 |
A non-volatile register includes a memory element. The memory element comprises a first end and a second end. The non-volatile register includes a register logic connected with the first and second ends of the memory element. The register logic is positioned below the memory element. The memory element may be a two-terminal memory element configured to store data as a plurality of conductivity profiles that can be non-destructively determined by applying a read voltage across the two terminals. New data can be written to the two-terminal memory element by applying a write voltage of a predetermined magnitude and/or polarity across the two terminals. The two-terminal memory element retains stored data in the absence of power. A reference element including a structure that is identical or substantially identical to the two-terminal memory element may be used to generate a reference signal for comparisons during read operations.
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申请公布号 |
US7839702(B2) |
申请公布日期 |
2010.11.23 |
申请号 |
US20100800289 |
申请日期 |
2010.05.11 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
NORMAN ROBERT |
分类号 |
G11C7/10 |
主分类号 |
G11C7/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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