发明名称 |
Solid-state image sensing device including reset circuitry and image sensing device including the solid-state image sensing device and method for operating the same |
摘要 |
An object of the present invention is to provide a solid-state image sensing device configured to change a bias voltage given to the photoelectric converting section at the time of resetting so that an operative condition of the photoelectric converting section after the resetting can be maintained a constant condition regardless of an amount of the incident light. To achieve the object, an MOS transistor T5 is provided. The drain of the MOS transistor T5 is connected with a gate and a drain of an MOS transistor T2 and the source of the MOS transistor T5configured to be applied a DC voltage VRS. Here, a signal Φ V is given, an MOS transistor T4is turned on, and image data is output. A signal Φ RS is given and the MOS transistor T5 is turned on. As a result, a gate voltage Vg of the MOS transistor T2 is maintained as a constant voltage value. Then, a reset operation for pixels is stared.
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申请公布号 |
US7839442(B2) |
申请公布日期 |
2010.11.23 |
申请号 |
US20050236388 |
申请日期 |
2005.09.27 |
申请人 |
KONICA MINOLTA HOLDINGS, INC. |
发明人 |
KAKUMOTO TOMOKAZU;YANO SO;KUSUDA MASAYUKI;SATO KAZUCHIKA;TANAKA YOSHIHIRO |
分类号 |
H04N3/14;H01L27/146;H04N5/335;H04N5/365;H04N5/374;H04N5/378 |
主分类号 |
H04N3/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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