| 摘要 |
PURPOSE: A semiconductor memory device is provided to rapidly disable a column selecting line by supplying a ground voltage to one side of the column selecting line. CONSTITUTION: A cell block(10) is composed of a plurality of memory cells which is selected by word-lines and bit-lines. A sense amplifying block(20) is composed of a plurality of bit-line sense amplifiers which are respectively connected to column selecting lines. A controlling part(100) generates a command signal and a control signal in response to a strobe signal. A column decoder(30) selectively enables the column selecting lines in respond to the command signal and column address. A column discharging part(200) supplies a ground voltage to the column selecting lines in response to the control signal. |
