| 摘要 |
<p>PURPOSE: A method for manufacturing a chrome-less phase inverting mask is provided to suppress the generation of a footing phenomenon in a resist film patterning process by arranging a buffer film between a hart mask film and a resist film. CONSTITUTION: The exposed parts of a buffer film and a hard mask film are etched to form a hard mask film pattern(221) and a buffer film pattern using a resist film pattern as an etching mask. A half-tone film pattern(211) and a phase-inversion pattern(201) are formed using a dry etching process with plasma. A half-tone film, the hard mask film, the buffer film, and the resist film are formed on a light transmitting substrate(200).</p> |
