发明名称 METHOD FOR FORMATION OF SILICEOUS FILM AND SILICEOUS FILM FORMED BY THE METHOD
摘要 <p>The present invention provides a method for formation of a siliceous film containing nitrogen in a low concentration. The method according to the present invention comprises the steps of: applying a polysilazane composition on an engraved substrate surface, to form a coating layer; hardening the coating layer only in the part adjacent to the substrate surface, to form a covering film along the shape of the engraved substrate; and removing the polysilazane composition of the coating layer in the part not hardened in the above covering film-formation step. According to this method, two or more siliceous films can be formed and layered.</p>
申请公布号 KR20100122488(A) 申请公布日期 2010.11.22
申请号 KR20107019058 申请日期 2009.02.27
申请人 AZ ELECTRONIC MATERIALS (JAPAN) K.K. 发明人 NAGAHARA TATSURO;HAYASHI MASANOBU
分类号 H01L21/316;H01L21/76 主分类号 H01L21/316
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