| 摘要 |
PURPOSE: A wafer monitoring device of a plasma doping device and a method thereof are provided to rapidly check whether a wafer is damaged or a loading process is in an abnormal state by detecting whether a wafer is in an abnormal state by measuring the voltage value of the wafer using a feedback pin. CONSTITUTION: A wafer loading stand(60) is located inside a chamber(50) and a wafer is located in the upper side. A pulse generator(67) applies a high voltage pulse to the wafer which is loaded in the wafer loading stand. A feedback pin(80) is included within the chamber and supplies a voltage to the wafer in the pulse generator. A wafer state determining part(70) determines whether a wafer is in an abnormal state by comparing a predetermined voltage value or an input voltage value with a voltage measuring value inputted from the feedback pin.
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