| 摘要 |
PURPOSE: A plasma doping device is provided to improve a doping process by controlling the diffusion of plasma and the movement of ion by synchronizing a bias voltage which is applied to a substrate electrode and a side electrode. CONSTITUTION: A substrate electrode(200) is installed inside a chamber(100) and substrate is settled. A high voltage supply part(300) supplies a high voltage pulse to the substrate electrode. A plasma generation part(600) generates plasma inside the chamber. A side electrode(410) is arranged in the circumference of the substrate electrode.
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