| 摘要 |
PURPOSE: A semiconductor light emitting device is provided to improve external quantum efficiency by preventing or suppressing the generation of light in a part of an active layer. CONSTITUTION: A light emitting device(10) is comprised of a P-type electrode(13), a P-type nitride semiconductor layer(14), an active layer(15), an N type nitride semiconductor layer(16), and an N type electrode(18). The P-type electrode is formed only a region excluding a current blocking region which is arranged with the N-type electrode. The current blocking region is an air gap having no P-type electrode. The current blocking layer is arranged with the N-type electrode.
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