| 摘要 |
PURPOSE: An apparatus for forming the thin film of a thin film solar cell is provided to perform a manufacturing process under a high temperature condition using a graphite substrate which is highly resistant to high temperature. CONSTITUTION: A first discharging unit forms a p-type semiconductor layer which has a wide band-gap. A second discharging unit forms a p-type semiconductor layer which has a narrow band-gap. A third discharging unit forms an n-type semiconductor layer. A fourth discharging unit includes a discharging hole through which thermal treating vapor on a graphite substrate(11) on which the n-type semiconductor layer is formed. A transferring unit transfers the graphite substrate. |
