发明名称 |
THIN FILM OF METAL SILICON COMPOUND AND PROCESS FOR PRODUCING THE THIN FILM OF METAL SILICON COMPOUND |
摘要 |
<p>An object of the present invention is to provide a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound has, as a unit structure, a transition metal-containing silicon cluster in which an energy gap E HL between highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) is wide. The present invention relates to a thin film of a metal-silicon compound and a process for producing the thin film of the metal-silicon compound. The metal-silicon compound is a compound of a transition metal and silicon, and has a transition metal-containing silicon cluster as a unit structure, the transition metal-containing silicon cluster having a structure in which a transition metal atom is surrounded by seven to sixteen silicon atoms, two of which are first and second neighbor atoms to the transition metal atom.</p> |
申请公布号 |
KR20100121649(A) |
申请公布日期 |
2010.11.18 |
申请号 |
KR20107020222 |
申请日期 |
2009.02.25 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY |
发明人 |
KANAYAMA TOSHIHIKO;UCHIDA NORIYUKI |
分类号 |
C01B33/06;C23C14/28;C23C16/42;H01L29/786 |
主分类号 |
C01B33/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|