| 摘要 |
PROBLEM TO BE SOLVED: To manufacture an SOI wafer of a high bonding strength by using at least a low-resistance silicon wafer on one side and bonding silicon wafers each having an oxide film. SOLUTION: An oxide film is formed on each of a silicon wafer having a specific resistance of 0.02Ωcm or less and a silicon wafer having a specific resistance of more than 0.02Ωcm. After bonding the silicon wafers through the respective oxide films, the bonded wafers are heated at 1,200°C or more for two hours or more, and the adhesive property of the oxide films on the bonded surfaces can be improved. COPYRIGHT: (C)2011,JPO&INPIT
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