| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure where a conductive material that is used as a buried electrode and has a specific pattern shape is buried in a nitride-based compound semiconductor, and to manufacture a device such as an SIT. SOLUTION: A group III-V compound semiconductor includes: (1) a first group III-V compound semiconductor having a structure with GaAlN laminated on a GaN layer; (2) a conductive material for covering part of the surface of the first group III-V compound semiconductor in a specific pattern shape in contact with it; and (3) a second group III-V compound semiconductor, which covers both of the exposed part of the surface, which is not covered with the conductive material, of the first group III-V compound semiconductor and the conductive material, and is represented by general formula: In<SB>u</SB>Ga<SB>v</SB>Al<SB>w</SB>N (where u+v+w=1, 0≤u≤1, 0≤v≤1, and 0≤w≤1), wherein the layer thickness of the conductive material is 5-100 nm. COPYRIGHT: (C)2011,JPO&INPIT
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