SEMICONDUCTOR MEMORY CELL AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor memory cell (20) which is provided with a memory element composed of an MFSFET (21) wherein the gate insulating film is composed of a ferroelectric film (4), and a selection switching element, which is composed of an MISFET (22) wherein the gate insulating film is composed of a paraelectric film (9). The first gate electrode (3) of the MFSFET is composed of a crystalline conductive film (3) formed on the surface of a crystalline insulating film (2) on a substrate (1), the ferroelectric film (4) is formed on the crystalline insulating film (2) by covering the first gate electrode (3), the paraelectric film (9) is formed on the ferroelectric film (4) with a semiconductor film (5) therebetween. The second gate electrode (10) of the MISFET (22) is formed on the paraelectric film (9).