| 摘要 |
<p>In a semiconductor device comprising sophisticated high-k metal gate structures formed in accordance with a replacement gate approach, semiconductor-based resistors may be formed above isolation structures (103D) substantially without being influenced by the replacement gate approach. Consequently, enhanced area efficiency may be achieved compared to conventional strategies, in which the resistive structures may have to be provided on the basis of a gate electrode metal, while, nevertheless, a low parasitic capacitance may be accomplished due to providing the resistive structures above the isolation structure.</p> |
