| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of accurately reading data from cell arrays. <P>SOLUTION: In the semiconductor memory device, a second cell array 20 is adjacent to a first cell array 10 in a first direction. A first area 10L and a second area 10R are positioned adjacent to both of the ends in a second direction of the first cell array. A third area 20L and a fourth area 20R are positioned adjacent to both of the ends in a second direction of the second cell array. A first sense amplifier 14 is arranged in the first area and a first current sink 15 is arranged in the fourth area. The first sense amplifier 14 compares a read current which flows into the first current sink 15 via a first memory cell A in the first cell array 10 and the second area from the first sense amplifier 14 with a reference current which flows into the first current sink 15 via the third area and a first reference cell A in the second cell array 20 from the first sense amplifier 14, and stored data in the first memory cell is thereby determined. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
