SOLUTION BASED ZIRCONIUM PRECURSORS FOR ATOMIC LAYER DEPOSITION
摘要
<p>Oxygen free, solution based zirconium precursors for use in ALD processes are disclosed for growing ZrO2 or other Zr compound films in a self-limiting and conformal manner. An oxygen free, solution based ALD precursor of (t-BuCp)2ZrMe2 is particular useful for depositing ZrO2 or other Zr compound films.</p>
申请公布号
WO2010132161(A1)
申请公布日期
2010.11.18
申请号
WO2010US30704
申请日期
2010.04.12
申请人
LINDE AKTIENGESELLSCHAFT;MA, CE;KIM, KEE-CHAN;MCFARLANE, GRAHAM, ANTHONY
