发明名称 SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To reliably suppress a decrease in high potential-side power supply voltage due to an undershoot of a negative voltage generated at a high potential-side reference potential (virtual ground potential VS) in a power device driving circuit. <P>SOLUTION: In a high voltage control circuit (HVIC), a high-breakdown-voltage diode D3 is provided between a common ground node (COM) and a virtual ground node (VS) by using a common substrate region. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010263116(A) 申请公布日期 2010.11.18
申请号 JP20090113590 申请日期 2009.05.08
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIMIZU KAZUHIRO
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/06;H01L29/78 主分类号 H01L27/04
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