| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for fabricating a wafer product that contains an active layer grown on top of a gallium oxide substrate and can increase the emission intensity. <P>SOLUTION: In step S105, a buffer layer 13 including group-III nitrides, such as GaN, AlGaN, and AlN is grown at 600°C on top of a principal surface 11a of a gallium oxide substrate 11. After growing the buffer layer 13, the gallium oxide substrate 11 and the buffer layer 13 are exposed to the atmosphere of a growth furnace 10 at 1,050°C, while a gas G2 containing hydrogen and nitrogen is supplied to the growth furnace 10. A group-III nitride semiconductor layer 15 is deposited on top of the modified buffer layer. The modified buffer layer contains, for example, voids. The group-III nitride semiconductor layer 15 can be formed of GaN and AlGaN. Proper crystal quality can be obtained on the modified buffer layer 14 when forming the group-III nitride semiconductor layer 15 from the materials. <P>COPYRIGHT: (C)2011,JPO&INPIT |
