| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an LED having a high light-emitting efficiency considering a demerit of both of a multiple quantum well structure and a single quantum well structure. <P>SOLUTION: The light-emitting diode includes at least an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer. The active layer has a first nitride semiconductor layer with the largest In mixed crystal ratio in the light-emitting diode, and has at least either a second nitride semiconductor layer containing an InGaN layer existing between the active layer and n-type nitride semiconductor layer or a third nitride semiconductor layer containing an InGaN existing between the active layer and p-type nitride semiconductor layer. At least either an In mixed crystal ratio of the InGaN layer contained in the second nitride semiconductor layer or the InGaN layer in the third nitride semiconductor layer is smaller than the In mixed crystal ratio of the first nitride semiconductor layer composing the active layer in the nitride semiconductor light-emitting diode. <P>COPYRIGHT: (C)2011,JPO&INPIT |
